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Trench PLANARIZATION and Simultaneous Formation of Buried Contact for High-Density DRAM Cells

IP.com Disclosure Number: IPCOM000036743D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Arienzo, M Chin, D Ginsberg, B Long, GJ Lu, NC [+details]

Abstract

A technique is described whereby trench planarization and buried contact are simultaneously fabricated, for high density DRAM cells, through a series of unique processing steps. Two methods are described to produce a DRAM cell with a buried contact between source and trench-storage node, using selective epitaxial growth techniques during trench planarization. (Image Omitted)