Browse Prior Art Database

Post Diffusion Insulation

IP.com Disclosure Number: IPCOM000036784D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Kenney, DM [+details]

Abstract

For dense random-access memories (DRAMs) utilizing trench storage nodes, a method is shown for processing the trench isolation after the high temperature processing is completed to eliminate crystal dislocations at isolation oxide intersections. The process may also be use in non-array applications.