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Post Diffusion Insulation Disclosure Number: IPCOM000036784D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29

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Kenney, DM [+details]


For dense random-access memories (DRAMs) utilizing trench storage nodes, a method is shown for processing the trench isolation after the high temperature processing is completed to eliminate crystal dislocations at isolation oxide intersections. The process may also be use in non-array applications.