The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Multiple Fin Polysilicon Storage Node Over a Transistor Switch Cell

IP.com Disclosure Number: IPCOM000036803D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue


Related People

Davis, A [+details]


This article describes a multiple fin polysilicon storage node placed over a transistor switch cell, resulting in a dense and high signal capacity DRAM semiconductor cell configuration.