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Browse Prior Art Database

Multiple Fin Polysilicon Storage Node Over a Transistor Switch Cell

IP.com Disclosure Number: IPCOM000036803D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Davis, A [+details]

Abstract

This article describes a multiple fin polysilicon storage node placed over a transistor switch cell, resulting in a dense and high signal capacity DRAM semiconductor cell configuration.