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Ring-Shaped Subcollector Reach-Through Contact for Vertical PNP Transistor

IP.com Disclosure Number: IPCOM000036845D
Original Publication Date: 1989-Nov-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Pelella, MM [+details]

Abstract

The forward-biased operating range of vertical bipolar PNPs in complementary technologies is limited due to a four-terminal thyristor breakover voltage or latch-up that occurs when the N+ and P subcollector junction becomes conductive. This self-biasing latch-up or breakover voltage phenomenon can be pushed-out and/or avoided by incorporating a ring-shaped subcollector reach-through contact, as shown in Fig. 1.