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Dry Etch Technique for Delineation of Metallic Films Bounded by Passivation Layers Including a Metal Penetration Examination Method

IP.com Disclosure Number: IPCOM000036866D
Original Publication Date: 1989-Nov-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Trudeau, FG Wade, JA [+details]

Abstract

It is proposed to substitute a dry etch technique in place of the wet etch technique used for delineation of metallic films bounded by oxide/ nitride passivation layers in semiconductor devices. A quick precise method is also suggested for physically examining for metal penetration.