Dry Etch Technique for Delineation of Metallic Films Bounded by Passivation Layers Including a Metal Penetration Examination Method
Original Publication Date: 1989-Nov-01
Included in the Prior Art Database: 2005-Jan-29
It is proposed to substitute a dry etch technique in place of the wet etch technique used for delineation of metallic films bounded by oxide/ nitride passivation layers in semiconductor devices. A quick precise method is also suggested for physically examining for metal penetration.