The following operators can be used to better focus your queries.
( ) , AND, OR, NOT, W/#
? single char wildcard, not at start
* multi char wildcard, not at start
(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*
This guide provides a more detailed description of the syntax that is supported along with examples.
This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.
Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
This article describes a method for suppressing undesired diffusion of dopant from doped polysilicon to silicide by the provision of non- doped polysilicon therebetween.
English (United States)
This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
100% of the total text.
Page 1 of 2
Method for Suppressing Diffusion of Dopant From Doped Polysilicon to
This article describes a method for suppressing undesired diffusion of
dopant from doped polysilicon to silicide by the provision of non- doped
In the figures, polysilicon layer 11, doped with P or N type dopant, is first
deposited on substrate 10. The layer 11 may be used to form an emitter. When
the layer 11 is used as a gate electrode, it is deposited on a thin oxide layer on
the substrate 10.
Then, intrinsic or non-doped polysilicon layer 12 is deposited, followed by
deposition of refractory metal silicide layer 13 and silicide annealing.
If needed, additional polysilicon layer 14 may be deposited on the silicide
The non-doped polysilicon layer 12 on the doped polysilicon layer 11 retards
upward diffusion of dopant. The concentration of dopant at the upper surface of
the layer 12 after silicide annealing is two or three orders lower than that of the
layer 11. By using the capping layer 12, the peeling of silicide and the etching
residue caused by pile-up of dopant at the interface of the silicide and polysilicon
Page 2 of 2
[This page contains 5 pictures or other non-text objects]