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RIE Damage Removal in a Downstream Plasma Reactor

IP.com Disclosure Number: IPCOM000036977D
Original Publication Date: 1989-Nov-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Giammarco, NJ Krawiec, TM Tyler, JM Goss, MW [+details]

Abstract

RIE (reactive ion etch) damage to semiconductor structures may be removed by the "dry" plasma process described in this article. The disclosed procedure eliminates the need for the more costly, potentially defect-producing, wet chemical clean-up etches now in use, and may be performed in the same reactor as a prior RIE step.