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Complementary Heterojunction Bipolar Circuit

IP.com Disclosure Number: IPCOM000036979D
Original Publication Date: 1989-Nov-01
Included in the Prior Art Database: 2005-Jan-29

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Knepper, RW Walsh, JL [+details]


The complementary bipolar circuit described in this article offers the attractive features of a CMOS (Complementary Metallic Oxide Semiconductor) circuit, which employs both p-channel and n-channel devices on the same silicon substrate, while avoiding the adverse saturation effects encountered with prior bipolar designs.