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Low Sheet Resistance Gate Electrode With Conventional Borderless Contacts

IP.com Disclosure Number: IPCOM000037071D
Original Publication Date: 1989-Nov-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Cronin, JE Harmon, DL Nesbit, LA Kaanta, CW [+details]

Abstract

By strapping doped polysilicon with titanium (Ti) and aluminum (Al) after high temperature gate electrode processing, gate electrodes having low electrical resistance are formed. Aluminum oxide etch stop layers are used to achieve borderless contacts.