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Field-Effect Transistor Produced Using Selective Epitaxy

IP.com Disclosure Number: IPCOM000037107D
Original Publication Date: 1989-Nov-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Kuech, TF Tischler, MA [+details]

Abstract

Disclosed is a transistor structure fabricated using selective epitaxy which permits lateral tailoring of the dopant distribution and composition within the device structure. The substrate is prepared for selective epitaxy by opening windows in a dielectric mask where the growth is to occur. In this case selective epitaxy will deposit epitaxial layers on the unmasked regions of the substrate, with no deposition occurring on the dielectrically-masked regions. This structure also takes advantage of the conformal nature of selective growth in trenches.