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Anodic Oxidation of Aluminum Studs for Defect Localization on Schottky Barrier Diodes

IP.com Disclosure Number: IPCOM000037108D
Original Publication Date: 1989-Nov-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Lorin, A Luguern, P [+details]

Abstract

Anodic oxidation of aluminum S-studs is a useful technique for the detection of leaky junctions on advanced semiconductor devices. This paper describes a simple method of coloration of anodized S-studs in optical microscopy.