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JFET Transfer Gate for Single Transistor Bipolar RAM Cell and Implementation of Multi-Port Cell and Reverse Mode Cell Thereof

IP.com Disclosure Number: IPCOM000037176D
Original Publication Date: 1989-Nov-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Chuang, CTK Shin, HJ [+details]

Abstract

Disclosed are new memory cells as combinations of the p-channel JFET transfer gate and the forward-mode or reverse-mode single-BJT static read/write storage device utilizing the reverse-base-current effect. The new cells facilitate the practical implementation of very high- density bipolar RAMs including multi-port memories with pure bipolar technologies and substantially reduced power consumption in the array, when compared with the recently proposed approach * that requires a complicated technology, such as BiCMOS, and dissipates large power (due to large collector voltage and current).