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Double Poly Buried Contact Process

IP.com Disclosure Number: IPCOM000037199D
Original Publication Date: 1989-Nov-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Bhattacharyya, A Robinson, J [+details]

Abstract

A double polysilicon buried contact CMOS process is described which avoids concerns associated with conventional buried contact processing on ultra thin gate dielectrics.