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Multiple Active Page Memory Disclosure Number: IPCOM000037213D
Original Publication Date: 1989-Nov-01
Included in the Prior Art Database: 2005-Jan-29

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Katayama, Y Kirihata, T Niijima, H Ohba, N Sakaue, Y Taira, Y [+details]


Disclosed is a memory device structure that emphasizes its page mode operation. Memory cells are divided into some ISLANDs (or blocks), and each island, comprised of the sense amplifiers and wordlines, is controlled by its own exclusive controller. When the chip is in stand-by state, all the sense amplifiers are activated (not precharged) and act as buffers.