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Vertical Capacitor VLSI Structure for High Voltage Applications Disclosure Number: IPCOM000037233D
Original Publication Date: 1989-Dec-01
Included in the Prior Art Database: 2005-Jan-29

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Nguyen, ST Proch, T [+details]


A technique is described whereby a vertical capacitor structure is fabricated into very large-scale integrated (VLSI) circuitry, where space limitations are a prime consideration, for high voltage applications. This type of structure is particularly applicable where the low voltage limitations of a thin oxide dielectric capacitor precludes its use in higher voltage applications.