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Temporary Contact Protection for a Single Mask, Gate Electrode and Diffusion Borderless Contact Process

IP.com Disclosure Number: IPCOM000037261D
Original Publication Date: 1989-Dec-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Cronin, JE Potter, MD [+details]

Abstract

A selectively deposited material, e.g., tungsten, is used in a single mask, borderless contact process as a selectively protective mask of one contact area during reactive ion etching of another contact area. Later, the selectively deposited material is replaced by a material in a deposition process known to result in good device contact characteristics.