Forming of Low Resistance Ohmic Contacts to III-V Semiconductors
Original Publication Date: 1989-Dec-01
Included in the Prior Art Database: 2005-Jan-29
A technique is described whereby low resistance ohmic contacts are formed for III-V semiconductor devices. Described is the deposition of an elemental semiconductor over a III-V substrate, followed by ion implantation and annealing, to attain the low resistance ohmic contacts.