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For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
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A technique is described whereby contamination and cleaning in plasma enhanced chemical vapor deposition (PECVD) systems are reduced through the use of silicon compounds.
English (United States)
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Reducing Contamination in Plasma Enhanced Chemical Vapor Deposition
A technique is described whereby contamination and cleaning in plasma
enhanced chemical vapor deposition (PECVD) systems are reduced through the
use of silicon compounds.
The concept utilizes electrodes and shielding components made of silicon,
within the PECVD process, so as to eliminate time consuming and hazardous
cleaning processes. The improvement is particularly applicable in the fabrication
of devices, such as amorphous silicon solar cells and thin film transistors (TFT's).
In PECVD systems, the metallic electrodes are considered the primary
source of metallic impurities that alter the properties of deposition films. The
differences in thermal expansion coefficients and intrinsic stress of the films lead
to the delamination of the built-up material and its flaking. Tiny dust particles
generated in the system are responsible for the creation of defects. This
phenomena, typically occurs after the build-up of only a few microns of the
deposited material. Naturally, this affects the performance of the devices and
reduces manufacturing yields.
Traditional solutions to avoid the contamination have been the periodic
cleaning of all the parts, where deposition occurs, such as substrate holders,
electrodes and shielding members. This was achieved either by wet or dry
etching, followed by a wet chemical cleaning. The process was expensive, time
consuming and hazardous, since hot basi...