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SIR Compatible E-Beam Exposure Process with Reduced Resist Thinning Disclosure Number: IPCOM000037486D
Original Publication Date: 1989-Feb-01
Included in the Prior Art Database: 2005-Jan-29

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Barry, JA Wilbarg, RR [+details]


This article concerns a simplified process for the controlled removal of an aluminum/copper (A1/Cu) conductive discharge layer from above a layer of or any others imaging resist, both layers are initially required to be present in the MLR (multilayer resist) used in the E-beam (electron beam) lithographic processing of semiconductor devices. Excessive thinning of the imaging layer must be prevented during removal of the conductive discharge layer otherwise the MLR would be rendered unusable.