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This article describes a fast, reliable and simple technique for measuring dielectric breakdown voltage.
English (United States)
This text was extracted from a PDF file.
This is the abbreviated version, containing approximately
80% of the total text.
Page 1 of 1
Differentiation Technique for Extraction of Thin-Film Dielectric Breakdown
This article describes a fast, reliable and simple technique for measuring
dielectric breakdown voltage.
The thin-film dielectric breakdown voltage in VLSI circuitry is commonly
computed using the ramp stress method. This method requires that a ramp
voltage be applied across a thin-film dielectric and a series resistor. Voltage is
monitored across the resistor. The increasing voltage will eventually hit the
breakdown point for the dielectric. At this voltage, current flows through the
dielectric and the series resistor. In theory, the voltage across the resistor should
be zero until the breakdown point is reached. The breakdown voltage is then
found by multiplying the time to breakdown by the slope of the ramp voltage.
All thin-film dielectrics actually exhibit a gradual increase in leakage current
known as Fowler-Nordheim tunneling current. The method commonly used to
compensate for this current requires generating an ideal Fowler-Nordheim
tunneling curve for the film being tested and comparing this to the slope change
of the waveform that appears across the resistor. This method is accurate but
requires time to visually approximate the intercept of two curves.
The new method proposed in this article saves time. A ramp voltage is
placed across a thin-film dielectric and voltage is monitored across a series
resistor by a digital storage oscilloscope. After breakdown is reached, the...