Sidewall Angle Reduction of Silicon Oxide Features on Semiconductor Wafers
Original Publication Date: 1989-Mar-01
Included in the Prior Art Database: 2005-Jan-29
The procedure described herein is performed to reduce the sidewall angle of silicon oxide-covered polysilicon lines on a semiconductor chip. The polysilicon lines are initially formed with a vertical sidewall. The oxide which is deposited on the sidewall is conformal. Therefore, the steep sidewall angle is retained. The sidewall may have other undesirable features in addition to its steepness.