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Heterostructure Laser

IP.com Disclosure Number: IPCOM000037574D
Original Publication Date: 1989-Mar-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Chang, LL [+details]

Abstract

An injection laser made of a heterostructure having n-type InAs and p-type GaSb as the junction electrodes with a layer of InGaAsSb between the electrodes. Variation of the alloy composition permits light output over a spectral range suitable for fiber communication.