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This article concerns a process improvement yielding a 10.5 um rack-free lift-off stencil film for substrate applications.
English (United States)
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Dual Polyimide Lift-Off Stencil for Thin/Thick Film Metallurgy
This article concerns a process improvement yielding a 10.5 um rack-free lift-
off stencil film for substrate applications.
Lift-off stencils for the generation of thin-film wiring on top of a substrate must
meet stringent thickness requirements while being able to survive subsequent
processing steps, in particular silylation, without cracking. Cracking propensity is
minimized by preheating the cathode prior to etching, but their presence
produces shorts in the top surface metallurgy.
The disclosed process improvement involves the production of an
underlayer film composed of:
(1) a lift-off polyimide (eg., Ciba-Geigy XU 284) baked to a
required temperature, and
(2) an insulating polyimide overcoat (eg., duPont RC 5878)
baked to 230oC. (process restricted).
On top of the underlayer film, a silylated resist RIE barrier is built, as shown
in the accompanying cross-section of the dual polyimide process after RIE. No
post RIE lift-off stencil cracks occur in the finished stencil with or without cathode
In the Figure, the silylated resist 1 overlays the insulating polyimide 2 and the
lift-off polyimide 3. The substrate 4, containing via 5, may be silicon, alumina, or