Browse Prior Art Database

Vacuum Deposition Process for High Transition Temperature Oxide Superconductors

IP.com Disclosure Number: IPCOM000037633D
Original Publication Date: 1989-Apr-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Kleinsasser, AW Laibowitz, RB Raider, SI Woodall, JM [+details]

Abstract

Many oxide materials have been shown to exhibit superconductivity at high temperatures (e.g., YBa2Cu3O7). The properties of these materials are very sensitive to oxygen content (e.g., oxygen vacancies). Thin films are very important for electronic device and other applications. Conventional film deposition methods can be used to produce films of these materials, but only with difficulty. Some problems include: (1) a high oxygen pressure is needed even if oxide source material is used (this causes problems with negative ion formation in sputtering, and reaction with source material, filaments, etc. as well as scattering of evaporant in the gas phase in evaporation processes), (2) high temperature (>900oC) anneals in oxygen are required to form the desired compounds.