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Enhanced Ion Implantation of Low Vapor Pressure Impurities

IP.com Disclosure Number: IPCOM000037640D
Original Publication Date: 1989-Apr-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Hovel, HJ Mitchell, JW Sadana, DK [+details]

Abstract

A single halide source can be used to convert several low vapor pressure impurities into their volatile halides and enhance respective beam currents. This is especially beneficial for refractory metals having high boiling points and volatile fluorides.