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Multilevel Resist Process using Sputtered Quartz as Interlayer

IP.com Disclosure Number: IPCOM000037705D
Original Publication Date: 1989-May-01
Included in the Prior Art Database: 2005-Jan-29

Publishing Venue

IBM

Related People

Authors:
Gut, GM Monahan, SE [+details]

Abstract

The Multilayer Resist (MLR) technique is used in the fabrication of very high resolution images on semiconductor chips. A specific feature of the MLR technique is the choice of the interlayer material. The purpose of the interlayer material is to provide a barrier to oxygen reactive ion etching (RIE) of the bottom polymer layer. Refer to Fig. 1.