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A technique is described whereby the combination CaSi2/CaF2/Si is used as the metal contact for three dimensional epitaxial metal/ insulator/semiconductor (MIS) structures.
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Epitaxial Metal/Insulator/Semiconductor Structure Using Casi2/Caf2/Si
A technique is described whereby the combination CaSi2/CaF2/Si is used as
the metal contact for three dimensional epitaxial metal/ insulator/semiconductor
Epitaxial MIS structures are an essential ingredient of three dimensional
device integration. CaSi2/CaF2/Si structures which exhibit nearly lattice-
matched structures in the (111) orientation are proposed for use as MIS
structures which maintain the single crystal structure of the silicon substrate.
To date, no suitable epitaxial metal contact has been reported for CaF2/Si
insulator/semiconductor combination. The materials which have been
investigated, such as epitaxial NiSi2, CoSi2 and doped Si, do not grow well on
CaF2 resulting from the presence of twin boundaries and chemical reactions with
the CaF2 which drive out fluorine. CaSi2 does not have a cubic crystal structure
like NiSi2, CoSi2 and Si which may help avoid twining.
The previously unexplored growth of epitaxial CaSi2 (111) has been
demonstrated by low energy electron diffraction, transmission electron
microscope and Rutherford backscattering. CaSi2 has a crystal structure in
which Si (111) double layers alternate with Ca layers.