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Epitaxial Metal/Insulator/Semiconductor Structure Using Casi2/Caf2/Si

IP.com Disclosure Number: IPCOM000037776D
Original Publication Date: 1989-Jun-01
Included in the Prior Art Database: 2005-Jan-30

Publishing Venue

IBM

Related People

Authors:
Himpsel, FJ Morar, J Wittmer, M [+details]

Abstract

A technique is described whereby the combination CaSi2/CaF2/Si is used as the metal contact for three dimensional epitaxial metal/ insulator/semiconductor (MIS) structures.