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Zero Threshold Voltage Device

IP.com Disclosure Number: IPCOM000037797D
Original Publication Date: 1989-Jul-01
Included in the Prior Art Database: 2005-Jan-30

Publishing Venue

IBM

Related People

Authors:
Kenney, DM Mandelman, JA Schaefer, CA [+details]

Abstract

By making channel width smaller in array devices than in support circuit devices, enhancement mode transistors having oxide filled trench isolation are made to have threshold voltage (VT) near zero for array devices while retaining a normal, higher VT in support circuit transistors. This technique avoids processing additions which are usually required to create transistors of different VT values on the same chip or wafer.