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Method for Making Devices Having Reduced Field Gradients at Junction Edges Disclosure Number: IPCOM000037800D
Original Publication Date: 1989-Jul-01
Included in the Prior Art Database: 2005-Jan-30

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El-Kareh, B Roberts, S Tonti, WR [+details]


By using polycrystalline (poly-Si) filled shallow trenches as doping sources, depth of uniform doping at junction edges is controlled to reduce field gradients near the junction edges. Short channel and device saturation effects, e.g., hot electron injection, are thereby reduced without degrading device transconductance.