Browse Prior Art Database

Gallium Arsenide (GaAs) Self-Aligned Metal Semiconductor Field Effect Transistor (MESFET)

IP.com Disclosure Number: IPCOM000037852D
Original Publication Date: 1989-Jul-01
Included in the Prior Art Database: 2005-Jan-30

Publishing Venue

IBM

Related People

Authors:
Solomon, PM Tiwari, S [+details]

Abstract

The resistance of the ungated region can be reduced in a self- aligned manner by placing a molybdenum germanium layer over the gate source and drain regions as shown in Fig. 1.