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Gallium Arsenide (GaAs) Self-Aligned Metal Semiconductor Field Effect Transistor (MESFET) Disclosure Number: IPCOM000037852D
Original Publication Date: 1989-Jul-01
Included in the Prior Art Database: 2005-Jan-30

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Solomon, PM Tiwari, S [+details]


The resistance of the ungated region can be reduced in a self- aligned manner by placing a molybdenum germanium layer over the gate source and drain regions as shown in Fig. 1.