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Multilayer X-Ray Mask Substrate

IP.com Disclosure Number: IPCOM000037856D
Original Publication Date: 1989-Jul-01
Included in the Prior Art Database: 2005-Jan-30

Publishing Venue

IBM

Related People

Authors:
Bassous, E Chan, KK Lamberti, AC [+details]

Abstract

Disclosed is a novel multilayer structure for use as an x-ray mask substrate. The structure consists of a boron-doped silicon membrane sandwiched between thin silicon nitride layers that are deposited by low pressure chemical vapor deposition (LPCVD). This 3-layer structure has many material and structural attributes which offer many advantages over conventional boron-doped silicon membranes. Silicon nitride films are smooth, hard, transparent, and physically and chemically stable at high temperatures. Silicon nitride technology is well-established and the films are easily processed by standard techniques.