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Metal Gate Structure Compatible with High Temperature Oxidation Processes

IP.com Disclosure Number: IPCOM000037863D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-30

Publishing Venue

IBM

Related People

Authors:
Cronin, JE [+details]

Abstract

Through the use of selective silicon deposition on exposed metal gate structures, a self aligned, oxidation resistive silicide is formed.