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Through the use of selective silicon deposition on exposed metal gate structures, a self aligned, oxidation resistive silicide is formed.
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Metal Gate Structure Compatible with High Temperature Oxidation
Through the use of selective silicon deposition on exposed metal gate
structures, a self aligned, oxidation resistive silicide is formed.
Because of their low resistivities, refractory metals, like Tungsten (W), have
been used as gate electrodes. However, refractory metal gate electrodes have
had limited use due to their poor oxidation resistance. Previous methods to
make the refractory metal gate structure oxidation resistive have not been
employed due to the complexity of the extra processing steps involved.
A W metal gate structure (2) is defined on gate oxide (1). Low temperature
selective silicon (3) is deposited on the W metal gate (2). The selective silicon
process (in the order of 300 degrees C), deposits on the W gate (2) and not on
the gate oxide (1). It is critical that the selective silicon deposition temperature
be low, so as to prevent oxidation of the W gate (2). An anneal is performed to
react all the Si with the W forming a W-silicide (WSi2) (4). The WSi2 (4) acts as
an oxidation resistance barrier.
The subsequent high temperature processing normally employed will not
oxidize the WSi2 protective coating. The added WSi2 protective cap does not
degrade any of the W gate properties.