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Method of Forming Ohmic Contacts to Semiconductors

IP.com Disclosure Number: IPCOM000037891D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-30

Publishing Venue

IBM

Related People

Authors:
Arienzo, WA Gorey, EF Schneider, CP [+details]

Abstract

Ohmic contacts for electrical test of semiconductor wafers can be formed in a simple and fast procedure. The process involves spot welding of metal contacts and has been effective with silicon and gallium arsenide. Some of the possible metal alloys which can be used include GaIn, SnSb, AuSn, and A1 for GaAs; GaIn for p-type silicon and AuSi for n-type silicon. Other commonly used contact materials would make ohmic contact to these and other types of semiconductors as well.