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Wiring Process Disclosure Number: IPCOM000037912D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-30

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Related People

Ning, TH [+details]


The addition of an "MO" or preliminary metallization level immediately above the contact openings of circuit chip devices prior to depositing planarization insulation permits use of contact studs having smaller, uniform diameter and promotes greater wiring density on the planar insulation. This preliminary metal level can be used for local wiring and to prearrange the contacts to intersect planar wiring.