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Process Control Monitor for an E-Beam Lithography Tool Disclosure Number: IPCOM000037916D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-30

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Guillaume, WJ Kurylo, A [+details]


A method has been proposed for determining the optimum developing time for resist images exposed on an E-beam lithography tool. The procedure provides a means of monitoring the development of semiconductor wafers in both research and manufacturing operations. It involves the use of a special test structure written by the E-beam tool which contains a broad range of dose increments with the nominal dose found in the center of the array. The structure also contains a trench for resist thickness measurements and an etch bias monitor to measure the growth or shrinkage of the resist after development. (Image Omitted)