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Shallow Isolation Trench Etching

IP.com Disclosure Number: IPCOM000037924D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Jost, ME Ng, HY Proulx, D [+details]

Abstract

Shallow isolation trenches in silicon substrates can be etched with rounded bottom corners having decreased stress and leakage by swelling the photoresist masking prior to etching.