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Deposit and Etch Technique for Making Smooth, Low Resistivity Tungsten Films

IP.com Disclosure Number: IPCOM000037942D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Cronin, JE [+details]

Abstract

By means of an alternating deposition and etching process, tungsten (W) films are created which are much less rough than those films created by conventional continuous chemical vapor deposition (CVD) techniques. The process is performed in situ by programming the tool controller to provide several deposition- and-etch cycles during the formation of a tungsten film. The film exhibits the low resistivity properties of conventionally deposited CVD W films.