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Process for Borderless Contacts to Silicon

IP.com Disclosure Number: IPCOM000037949D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Kaanta, CW Marmillion, NP [+details]

Abstract

By adding an etch stop layer and using selectively deposited tungsten as an etch stop in exposed silicon contact regions, borderless contacts are made to silicon at varying depths under an insulator. Contacts made by this technique use minimum area without adding photo-masking steps.