Dismiss
The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Reactive Sputtered Titanium Nitride with Excess Nitrogen as a Chemical Vapor Deposited Tungsten Adhesive Layer

IP.com Disclosure Number: IPCOM000037951D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Lee, PP Smith, EM [+details]

Abstract

A titanium nitride composition is shown which allows complete removal of a semiconductor wafer's backside film during tungsten cap strip while insuring good tungsten to insulator adhesion.