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Reactive Sputtered Titanium Nitride with Excess Nitrogen as a Chemical Vapor Deposited Tungsten Adhesive Layer

IP.com Disclosure Number: IPCOM000037951D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-31

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Lee, PP Smith, EM [+details]


A titanium nitride composition is shown which allows complete removal of a semiconductor wafer's backside film during tungsten cap strip while insuring good tungsten to insulator adhesion.