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A titanium nitride composition is shown which allows complete removal of a semiconductor wafer's backside film during tungsten cap strip while insuring good tungsten to insulator adhesion.
English (United States)
This text was extracted from a PDF file.
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Reactive Sputtered Titanium Nitride with Excess Nitrogen as a Chemical
Vapor Deposited Tungsten Adhesive Layer
A titanium nitride composition is shown which allows complete removal of a
semiconductor wafer's backside film during tungsten cap strip while insuring
good tungsten to insulator adhesion.
Because a chemical vapor deposited (CVD) tungsten (W) film has poor
adhesion to insulator surfaces, e.g., BPSG, PSG, TOX, SiNy, etc., an adhesion
layer is required between tungsten and insulator. Titanium nitride (TiN), formed
by thermal annealing a thin titanium film in a nitrogen ambient, is recognized as
good adhesive and contact barrier for CVD W. The annealed TiN layer also
prevents tungsten from flaking on the backside of wafers. Because tungsten is
readily oxidized at deposition temperatures between 400oC and 550oC, a cap
layer over the CVD W film is used to prevent formation of tungsten oxide during
wafer unloading from a CVD tool. This cap layer is subsequently stripped in a wet
strip solution. Due to the conformal deposition characteristics of CVD W,
deposition occurs on both front and back sides of wafers. A wafer backside
particulate problem results when blanket deposited CVD W is subjected to a wet
etch, especially during the cap strip operations. By altering the structure and
composition of the adhesion layer on the backside of wafers, particulate
problems are completely eliminated.
By utilizing a reactive sputtered TiN with excess nitrogen present, the