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Additive Process for Making Small Polysilicon Gates

IP.com Disclosure Number: IPCOM000037953D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Bracchita, JA Cronin, JE [+details]

Abstract

An additive polysilicon definition process is used to create gate conductors of size smaller than photo limits allow. The process results in self-aligned source and drain contacts, the dimensions of which may also be below photo limits.