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A Diode Laser Driven Metal Deposition Process for Polyimide Substrates

IP.com Disclosure Number: IPCOM000038004D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Arjavalingam, G Doyle, JP Hurst, JE, Jr Oprysko, MM Rossnagel, SM [+details]

Abstract

Laser CVD by irradiating a polymer substrate with a low energy optical beam, e.g., a GaAs diode laser of wavelength 805 nm, is achievable by forming a carbonaceous layer on the polymer, e.g., polyimide, by exposing the polymer to an argon ion beam. The carbonaceous layer is exposed to an organometallic compound, e.g., a vapor, liquid or ink. The carbonaceous layer is selectively exposed to the optical beam. The carbonaceous layer absorbs the radiation resulting in thermal decomposition of the organometallic compound to form metal lines on the carbonaceous layer. The carbonaceous layer, not under the deposited metal lines, is changed back to the polymer by exposure to an argon/ nitrogen or argon/oxygen ion beam.