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Method for Producing Planarized Polysilicon Filled Trenches

IP.com Disclosure Number: IPCOM000038054D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Machesney, BJ Warley, SD [+details]

Abstract

By using a recently developed high selectivity polysilicon to silicon dioxide (SiO2) or silicon nitride (Si3N4) chemical- mechanical polishing method, a single layer trench dielectric acts as an effective etch stop. Thus, a simplified process for filling trenches with polysilicon and planarizing is achieved. Stress induced crystal dislocations in substrate silicon near trench edges following isolation oxidation are reduced by the use of this process.