Method for Producing Planarized Polysilicon Filled Trenches
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-31
By using a recently developed high selectivity polysilicon to silicon dioxide (SiO2) or silicon nitride (Si3N4) chemical- mechanical polishing method, a single layer trench dielectric acts as an effective etch stop. Thus, a simplified process for filling trenches with polysilicon and planarizing is achieved. Stress induced crystal dislocations in substrate silicon near trench edges following isolation oxidation are reduced by the use of this process.