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A Process And Structure for Forming High Sheet Rho Resistors in Oxides

IP.com Disclosure Number: IPCOM000038066D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Beyer, KD Lechaton, JS Rausch, JE [+details]

Abstract

High value resistors (> 10KL/square) can be formed in oxide layers in which resistors are stable and have minimum capacitance.