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Ion Beam Induced Mixing for Via Contact in MCP Module

IP.com Disclosure Number: IPCOM000038149D
Original Publication Date: 1989-Nov-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Chen, PC Ho, PS Lewis, JE Weale, RD [+details]

Abstract

In some structures it is desired to use a thin Cr layer to enhance adhesion of a metal, such as copper, to a polymer surface. In the area where there are metal vias (M1) in the polymer, the pressure of the Cr layer can create an interface Cr-oxide layer that affects the contact resistance of the via. Thus, when another metal layer (M2) is deposited on the M1 via, poor conductivity can result. To avoid this, the Cr layer is deposited to be discontinuous in the via area so that good M2-M1 metal contact can be made.