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High Conductivity Nickel Silicide Polycide Gates for Sub-Micron Field Effect Transistors

IP.com Disclosure Number: IPCOM000038167D
Original Publication Date: 1989-Dec-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Geiss, P Roberts, S [+details]

Abstract

Low resistance gate electrodes and very shallow, low leakage, source and drain junctions are obtained by a dual salicide process. A nickel salicide (NiSi) process is used on polysilicon gate electrodes and a titanium or cobalt salicide (TiSi2 or CoSi2) process on junctions.