High Conductivity Nickel Silicide Polycide Gates for Sub-Micron Field Effect Transistors
Original Publication Date: 1989-Dec-01
Included in the Prior Art Database: 2005-Jan-31
Low resistance gate electrodes and very shallow, low leakage, source and drain junctions are obtained by a dual salicide process. A nickel salicide (NiSi) process is used on polysilicon gate electrodes and a titanium or cobalt salicide (TiSi2 or CoSi2) process on junctions.