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Off-normal ion impingement during etch planarization eliminates vertical enlargement of voids formed in conformal coatings used to fill holes.
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Off-Normal Ion Etching in Hole Filling Process
Off-normal ion impingement during etch planarization eliminates vertical
enlargement of voids formed in conformal coatings used to fill holes.
Referring to cross section Fig. 1, material 10 is conformally deposited to fill a
hole in substrate 12. Void 14 usually forms during the deposition. When normal
ion impingement is used to etch material 10 in the planarizing process, the void
can be enlarged vertically downward and, in some cases, etching can progress
through material 10 near the bottom of the void.
As shown in Fig. 2, ion flux 16 impinging at an off-normal angle during
etching has no tendency to enlarge the void downward when removing material
10 from upper horizontal surfaces. The slanted partial removal of hole fill
material 10 may be avoided by using a single ion source and rotating the
substrate, by using multiple ion sources, or by using a ring ion source during