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Totally Sealed Spacer Structure

IP.com Disclosure Number: IPCOM000038174D
Original Publication Date: 1989-Dec-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Chesebro, DG Hartstein, G [+details]

Abstract

To preserve good silicon line-to-spacer properties while protecting against later process damage to spacer integrity, a spacer structure comprised of a first thin layer of silicon (SiO2), a second thicker silicon nitride (Si3N4) layer, and, following a light SiO2 etch, a third thin sidewall coating of Si3N4 is added. At a small processing cost increase, significant yield improvement is obtained with this process.