Totally Sealed Spacer Structure
Original Publication Date: 1989-Dec-01
Included in the Prior Art Database: 2005-Jan-31
To preserve good silicon line-to-spacer properties while protecting against later process damage to spacer integrity, a spacer structure comprised of a first thin layer of silicon (SiO2), a second thicker silicon nitride (Si3N4) layer, and, following a light SiO2 etch, a third thin sidewall coating of Si3N4 is added. At a small processing cost increase, significant yield improvement is obtained with this process.