Browse Prior Art Database

Nitride Encapsulated Spacer

IP.com Disclosure Number: IPCOM000038176D
Original Publication Date: 1989-Dec-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Miles, GL [+details]

Abstract

To assure integrity of insulation on sidewalls of polysilicon gate conductors, initial silicon dioxide (SiO2) sidewall spacers are isotropically etched slightly and then encapsulated in silicon nitride (Si3N4).