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Disclosed is a technique to measure physical semiconductor device capacitance accurately. The technique enables one to measure capacitance in femto (10-15) Farad resolution.
English (United States)
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A Sensitive Capacitance Measurement for Semiconductor Device
Disclosed is a technique to measure physical semiconductor device
capacitance accurately. The technique enables one to measure capacitance in
femto (10-15) Farad resolution.
The VLSI semiconductor device capacitances are in the order of
tens femto Farad range. To directly measure this small value of
capacitance is very difficult, if not impossible. This is because
the magnitude of set-up stray capacitance, which is imbedded in the
measurement, is usually much larger than the one measured. Thus, the
capacitance measured is
Cm = Cr + Cs, where Cm is the measurement capacitance,
Cr is the real device capacitance,
and Cs is the set-up stray capacitance.
Instead of measuring the device capacitance once as in the
above equation, an additional measurement with two devices in
parallel is required. The second capacitance measured is
Cmm = 2Cr + Cs.
The real device capacitance can then be obtained by a simple
subtraction of two measurements, i.e.,
Cr = Cmm - Cm.
The capacitance measured using this technique has no set-up stray
capacitance involved. The resolution of measurement accuracy is only limited by
the capacitor meter used.