Browse Prior Art Database

Deposition of Tungsten On Polysilicon

IP.com Disclosure Number: IPCOM000038315D
Original Publication Date: 1989-Dec-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Chen, TC Joshi, RV [+details]

Abstract

Delamination and high contact resistance can be avoided by depositing a thin layer of tungsten on polysilicon via chemical vapor deposition and thereafter increasing the layer thickness with sputtered tungsten.