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Deposition of Tungsten On Polysilicon Disclosure Number: IPCOM000038315D
Original Publication Date: 1989-Dec-01
Included in the Prior Art Database: 2005-Jan-31

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Related People

Chen, TC Joshi, RV [+details]


Delamination and high contact resistance can be avoided by depositing a thin layer of tungsten on polysilicon via chemical vapor deposition and thereafter increasing the layer thickness with sputtered tungsten.